•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The results of studies of silicon doped with Mn and Se atoms are presented. Manganese was diffused at T=1150 °C for 0.5 hours by "low-temperature" diffusion. Then, similarly we carried out the diffusion of Se (T=1200 °C, for 0.5 hour). The spectral dependence of the absorption coefficient of samples in the region of 400÷1100 nm was investigated. In the samples Si in the region =930÷1100 nm, there is a smoother decline in the absorption coefficient compared to the control sample, while the samples Si light absorption was 10 times greater than in Si and 30 times more than in the control sample Si. This change in the properties of Si is explained by the formation of binary clusters of impurity manganese and selenium atoms in the silicon crystal lattice.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.