The results of studies of silicon doped with Mn and Se atoms are presented. Manganese was diffused at T=1150 °C for 0.5 hours by "low-temperature" diffusion. Then, similarly we carried out the diffusion of Se (T=1200 °C, for 0.5 hour). The spectral dependence of the absorption coefficient of samples in the region of 400÷1100 nm was investigated. In the samples Si in the region =930÷1100 nm, there is a smoother decline in the absorption coefficient compared to the control sample, while the samples Si light absorption was 10 times greater than in Si and 30 times more than in the control sample Si. This change in the properties of Si is explained by the formation of binary clusters of impurity manganese and selenium atoms in the silicon crystal lattice.
Iliev, Halmurat Mijitovich; Tursunov, Mamasobir Ochildiyevich; Koveshnikov, Sergey Vladimirovich; and Xudoynazarov, Zafar Burxutovich
"RESEARCH OF PROPERTIES OF SILICON WITH BINARY NANOCLUSTERS WITH PARTICIPATION OF Mn AND Se ATOMS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 8.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss2/8