The process of formation of a nanosized single-crystal film of Rb silicide ion implantation of low-energy and high-dose ions into Si(111) and Si(100) is investigated by the methods of electron spectroscopy and diffraction of slow electrons. It was found that the implantation of Rb ions with an energy of 1 keV and a dose of 8·1016 cm-2 and subsequent short-term heating leads to the formation of an RbSi film with a surface structure Si(111)-2x2Rb. The effect of ion implantation and subsequent heating on the frequency of surface and bulk plasma oscillations of silicon valence electrons is described.
Nasriddinov, Sayfullo Saidovich and Tursunmetova, Zukhra Abdurashitovna,
"FORMATION AND PROPERTIES OF A RUBIDIUM SILICIDE FILM OBTAINED BY LOW-ENERGY IONIC IMPLANTATION,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 7.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss2/7