•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The process of formation of a nanosized single-crystal film of Rb silicide ion implantation of low-energy and high-dose ions into Si(111) and Si(100) is investigated by the methods of electron spectroscopy and diffraction of slow electrons. It was found that the implantation of Rb ions with an energy of 1 keV and a dose of 8·1016 cm-2 and subsequent short-term heating leads to the formation of an RbSi film with a surface structure Si(111)-2x2Rb. The effect of ion implantation and subsequent heating on the frequency of surface and bulk plasma oscillations of silicon valence electrons is described.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.