Home > EJSSE > Vol. 2 (2020) > Iss. 2
Euroasian Journal of Semiconductors Science and Engineering
Abstract
The present work reports the electrical properties and photosensitivity of a composite photodetector based on the photodiode and avalanche transistor, which has a photosensitivity two times higher than the photosensitivity of the single photodiode. The photosensitivity of the proposed structure increases with increasing radiation intensity and operating voltage. An example of an amplifier of alternating signals based on an avalanche composite phototransistor is given.
Recommended Citation
Karimov, Abdulaziz . Vakhitovich; Yakubov, Anvar Azamovich; Abdulkhaev, Oybek Abdullazizovich; and Khakimov, Alim Adilovich
(2020)
"A COMPOSITE PHOTODETECTOR BASED ON THE PHOTODIODE AND AVALANCHE TRANSISTOR,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
2
, Article 6.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss2/6