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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The paper presents the study of various photoelectric phenomena in Si crystalline samples obtained at different Ps. The results of investigations of the spectral dependence had shown that in low-resistance n –type conductivity Si samples with ρ<102 Ohm·cm, in the presence of weak background integrated illumination, no infrared quenching (IR) of photoconductivity was observed. To find out the nature of the IR quenching of photoconductivity, the authors also studied the lux-ampere characteristic (LAC) of Si samples with various degrees of compensation. The authors contend that the presence of three distinct regions of IR quenching of photoconductivity in Si samples is most likely attributable to buildup of three sensual energy levels introduced by sulfur into the silicon band gap with anisotropic carrier capture cross sections of Sn,s>>Sp,s associated with multiply charged impurity centers. Based on the above evidences, the authors assume that additional energy levels are allegedly introduced into the band gap of silicon only by "quasi-molecules" of sulfur consisting of two (S2) or four (S4) sulfur atoms located in adjacent sites of the silicon crystal lattice.

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