Euroasian Journal of Semiconductors Science and Engineering
Article Title
Abstract
Negative differential resistance (NDR) switching was observed in ZnMgO crystalline thin films grown on the p-type Si with a thin native SiO2 oxide layer by ultrasonic spray pyrolysis (USP). The NDR switching was observed during the RESET cycle. This effect is explained by the resonant tunneling of electrons through the Ag nanoclusters in SiO2 layer after rupture of conductive silver filaments.
Recommended Citation
Abdullaev, Shovkat; Lee, Sejoon; Lee, Dong Jin; and Sharipova, Rano
(2020)
"NEGATIVE DIFFERENTIAL RESISTANCE EFFECT IN ZnMgO MEMRISTOR WITH SiO2 THIN OXIDE LAYER ON P-TYPE SILICON,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
2
, Article 3.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss2/3