This paper shows the possibility of expanding the spectral sensitivity of silicon by creating binary compounds Zn and Se in the silicon crystal lattice. It is established that the developed technology makes it possible to obtain binary Zn and Se nanoclusters in silicon with certain physical parameters.
Zikrillaev, Nurullа Fatkhullaevich; Tursunov, Orzibek Bahrom ugli; Kurbonaliev, Kobiljon Kasimjon ugli; and Shoabdurakhimova, Manzura
"PHOTOELECTRIC PROPERTIES OF VARISONIC STRUCTURES
BASED ON SILICON WITH IMPURITY NANOCLUSTERS Zn and Se,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 2.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss2/2