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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

Semiconductor compounds А2В6 are the most promising for the manufacture of uncooled semiconductor detectors (X) -, () - and other types of nuclear radiation. Electronic processes in pCdTe-TeO2-n SnO2 structures were investigated by the volt-capacitive method. The basic pCdTe thin film grown on a Mo substrate consists of columnar microcrystals with a grain size of 100-150 μm. The resistivity of the pCdTe films is ρ ≈ 102–103Оm • sm, the thickness is d ≈ 70–100 μm. The wide-gap semiconductor layer pSnO2 is deposited by magnetron ion sputtering. The electrophysical characteristics of the structures were studied before and after irradiation with  - quanta. The photosensitive structure pCdTe-TeO2-nSnO2 can be widely used to register X-ray (X) and gamma () radiation as a detector.

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