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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

Impurity interaction in silicon doped with manganese and zinc was studied by capacitive methods. It was found that the simultaneous introduction of Mn and Zn into silicon results in the formation of levels with ionization energies Ес - 0.42 eV and Ес - 0.47 eV; these levels are associated with manganese and zinc atoms, respectively. Note that the concentrations of the observed levels are an order of magnitude lower than in the samples separately doped with manganese and zinc. It was found that the level Ес - 0.54 eV, associated with the paramagnetic cluster (Mn0)4 in Silicon, is not observed in the n-Si samples. A new deep level with an ionization energy Ес - 0.33 eV and an electron capture cross section n = 4.3‧10-14cm2, formed by the joint introduction of manganese and zinc into silicon, has been discovered

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