In this work, the effect of ytterbium impurity on the formation of radiation defects under electron irradiation is investigated. It is shown that the presence of ytterbium atoms slows down the process of radiation defect formation: the concentration of A– and E – centers in the n-Si samples is much lower than in the control samples. It was found that the efficiency of the formation of radiation defects depends on the concentration of the Yb impurity, its state in the lattice, and the content of oxygen atoms in silicon
Daliev, Shakhrukh Khojakbarovich; Bekmuratov, Mansur Bakhrаm ugli; Naurzalieva, Elmira Makhambetyarovna; and Rakhmanov, Dilmurod Abdujabbor ugli
"DEFECTS FORMATION IN SILICON DOPED WITH YTTERBIUM AND IRRADIATED BY ELECTRONS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
, Article 9.
Available at: https://uzjournals.edu.uz/semiconductors/vol2/iss1/9