Home > EJSSE > Vol. 2 (2020) > Iss. 1
Euroasian Journal of Semiconductors Science and Engineering
Article Title
Abstract
A new method for studying the effect of high pressure on the Landau levels of electrons in semiconductors has been developed. The influence of pressure on the oscillations of the Shubnikov - de Haas and de Haas - van Alphen in semiconductors is studied. The theoretical results are compared with the experimental results. It is shown that the effect of pressure on the band gap is significantly manifested in the magnitude of oscillations in the Shubnikov - de Haas and Haas - van Alphen effects in semiconductors.
Recommended Citation
Erkaboev, Ulugbek Inayatillyevich; Rakhimov, Rustam Gulomzhonovich; and Abdulnosirovich, Nozimjon Sayidov
(2020)
"INFLUENCE OF PRESSURE ON LANDAU LEVELS OF ELECTRONS IN THE CONDUCTIVITY ZONE WITH THE PARABOLIC DISPERSION LAW,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
1
, Article 4.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss1/4