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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The work systematically and comprehensively investigates the state of sulfur impurity atoms in silicon at various temperatures. The obtained experimental data showed that highly sulfur-compensated silicon has a high photosensitivity in a wide spectral region. The possibility of creating high-sensitivity near-infrared photodetectors based on such material is shown.

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