Home > EJSSE > Vol. 2 (2020) > Iss. 1
Euroasian Journal of Semiconductors Science and Engineering
Article Title
FEATURES OF ELECTROPHYSICAL PROPERTIES OF STRONGLY COMPENSATED SILICON DOPED WITH SULFUR
Abstract
The work systematically and comprehensively investigates the state of sulfur impurity atoms in silicon at various temperatures. The obtained experimental data showed that highly sulfur-compensated silicon has a high photosensitivity in a wide spectral region. The possibility of creating high-sensitivity near-infrared photodetectors based on such material is shown.
Recommended Citation
Ayupov, Qutub Sautovich and Shergoziyev, Shakhobiddin Boytemir ogli
(2020)
"FEATURES OF ELECTROPHYSICAL PROPERTIES OF STRONGLY COMPENSATED SILICON DOPED WITH SULFUR,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 2
:
Iss.
1
, Article 2.
Available at:
https://uzjournals.edu.uz/semiconductors/vol2/iss1/2