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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The research results of the current-voltage characteristics of silicon diode p+pnn+-structures pre-irradiated with fluencies of fast electrons are given, which showed that after heat treatment both the voltage drop at direct bias and the leakage currents of the diodes at reverse bias decrease, creating conditions for an increase in the impulse withstand power.

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