•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The effect of γ-irradiation on the performance of Si -based thermal sensors was investigated. It was found that the lower the concentration of impurity atoms, the greater the resistance of the temperature sensor and, accordingly, the greater the radiation resistance. The sealing state is fairly stable until a dose of Ф>5•107p, and at higher doses of Ф>5•108p, the sealing is almost destroyed. Moreover, in this dose range, the reliability and ohmicity of the electrical contact are practically unchanged. The stimulating effect of large doses of γ-radiation leads to an increase in the coefficient B in the developed temperature sensors based on silicon doped with Ni.

References

1. Nasriddinov S.S. Исследование термодатчиков на основе Si [Research of temperature sensors based on Si ] Журнал нано- та електронної фізики [journal of nano- and electronic physics] Vol. 7 No 3, 03037(5pp), 2015. (In Ukr.) 2. Nasriddinov S.S., Daliev Sh.Kh., Ismoilov Sh.A., Esbergenov D.M. study of the influence of γ-irradiation on the performance characteristics of temperature sensors based on silicon alloyed with nickel and titanium. The Ninth International Conference Modern Problems of Nuclear Physics and Nuclear Technologies‖, September 24-27, 2019 PP216-217 3. Buimistryuk G.Ya. Printsipy postroeniya intellektual'nykh volokonno-opticheskikh datchikov [The principles of building intelligent fiber optic sensors]. Foton-Ekspress [Foton-Express]. 2011. No.6. pp. 43-46. (In Russ.) 4. Bakhar L.I., Zaitov F.A., Il'chenko L.I., Chkupina V.N., Il'ina T.V. Osobennosti radiatsionnogo defektoobrazovaniya v osobo chistom vysoko-omnom kremnii s razlichnoi tekhnologiei vyrashchivaniya [Peculiarities of radiation defect formation in highly pure high-ohm silicon with various growing technologies]. Tez. dokl. Vsesoyuzn. sem.: "Radiatsionnye effekty v poluprovodnikakh i polupro-vodnikovykh priborakh" [Conferense of “Radiation effects in semiconductors and semiconductor devices”]. Baku. 1980. p.20. (In Russ.) 5. Egamberdiev B.E., Iliev Kh.M., Tachilin S.A., Toshev A.R. Radiatsionnaya stabil'nost' parametrov kremnievykh solnechnykh elementov legirovannykh [Radiation stability of parameters of silicon solar cells doped with REE].Fizika-Tomsk [Physics-Tomsk]. 2008. №13(3). pp.170-172. (In Russ.) 6. Gerasimenko N.N, Smirnov D.I. Radiatsionnaya stoikost' nanostruktur [The radiation resistance of nanostructures]. Nano- i mikrosistemnaya tekhnika [Nano and microsystem technology]. 2008. No. 9. pp.2-11. (In Russ.) 7. Gerasimenko N.N, Smirnov D.I., Medetov N.A., Mamaikin A.V. Radiatsionnaya stoikost' nanostruktur [Radiation resistance of nanostructures]. Tezisy mezhdunarodnoi konferentsii «Kremnii-2010»[Abstracts of the international conference "Silicon-2010"]. Novosibirsk.2010. p.134. (In Russ.) 8. Kolpachev A.B., Arzumanyan G.V., Krakotets H.A. Elektronnoe energeticheskoe stroenie kremniya s primes'yu nikelya [The electronic energy structure of silicon with an admixture of nickel]. Vysokochistye metalicheskie i poluprovodnikovye materialy.[High purity metal and semiconductor materials]. "Kontrast" [Contrast]. 2002. pp.83 - 86. (In Russ.) 9. Bakhadirkhanov M.K., Ayupov K.S., Arzukulov E.U., Sirazhev S.N., Toshboev T.U. Termicheskie svoistvo kremniya s klasterami atomov nikelya [Термические свойство кремния с кластерами атомов никеля]. Fizika izdanie tomskogo gosuniversiteta [Physics edition of Tomsk State University]. 2008. No.11, pp.3-5. (In Russ.) 10. Nasriddinov S.S., Valiev S.A., Khonboboev A. Ismailov K., Allam-bergenov A. Vliyanie γ - oblucheniya na parametry termodatchikov legirovannykh nikelem, seroi, i margentsem [Influence of γ - radiation on the parameters of temperature sensors alloyed with nickel, sulfur, and manganese]. Mezhdunarodnaya konferentsiya [International Conference]. Chimkent. 2008. pp. 294-295. (In Russ.) 11. Bakhadirkhonov M.K., Nasriddinov S.S., Valiev S.A., Tachilin S.A., Egamov U. Chuvstvitel'nyi, bystrodeistvuyushchii i radiotsionnostoikii termo-datchik dlya distantsionnogo kontrolya temperatury [Sensitive, high-speed and radiation-resistant temperature sensor for remote temperature control]. Zavodskaya laboratoriya [Factory laboratory]. Moskva [Moscow]. 2008, Vol.74, No.11. pp. 12-14. (In Russ.) 12. Kholodar' D.A., Dalkovskii Yu.V., Konoddinskii Yu.V., Vinetskii V.A. Nepryamaya rekombinatsiya vakansii i mezhdouzel'nykh atomov v obluchennom kremnii [Indirect recombination of vacancies and interstitial atoms in irradiated silicon]. M.: VSh, 1976. No. 10. pp.1712-1718. (In Russ.) 13. Bolotov V.V., Smirnov L.S., Vasil'ev A.V., Rudinskaya S.A., Smagulova S.A. O roli tsentrov annigilyatsii radiatsionnykh defektov v poluprovodnikakh [On the role of annihilation centers of radiation defects in semiconductors]. Semiconductors. 1975. No.9. pp.186-191. (In Russ.)

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.