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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In the article, by the methods of spectroscopy of elastically scattered electrons, Oje electron spectroscopy and measurement of secondary emission characteristics of pure and ion-implanted Si samples. As well as dielectric 〖SiO〗_2 films obtained using thermal oxidation in an atmosphere of dry oxygen and implantation of low-energy O_2 ions into single crystals silicon (III) investigated changes in the conditions of generation and exit of secondary electrons from the samples. It is shown that the fine structure of the energy dependences of the secondary electron emission coefficients and their values for dielectric 〖SiO〗_2, films is determined by the history of the samples. 〖SiO〗_2, films obtained by implantation of O_2 ions have good adhesion, continuity, and surface smoothness. Characteristic for the implantation of Ba + ions in 〖SiO〗_2, with a higher dose (~8∙〖10〗^16 〖cm〗^(-2)) with an energy of bombardment (Е_0 = 1 keV) that crystallizes in parts of the sections of the implanted film region. Crystallization of an amorphous film is one of the reasons for increasing the depth of the exit zone of true secondary electrons.

References

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