Home > EJSSE > Vol. 1 (2019) > Iss. 6
Euroasian Journal of Semiconductors Science and Engineering
Abstract
Si and Si structures with a deep p–n-junctions (30 microns) were obtained by diffusion doping. It is shown that the parameters of silicon solar cells with a deep-lying p-n junction are improved by Nickel doping. Influence of additional temperature annealing at different temperatures of samples with clusters of Nickel atoms in the silicon lattice was investigated and optimal conditions for cluster formation were determined
References
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Recommended Citation
Iliev, Halmurat Mijitovich; Kenjaev, Zoir Tohir ugli; Isakov, Babir Alimdjanovich; and Narkulov, Nigmat
(2019)
"EFFECT OF TEMPERATURE ANNEALING ON THE EFFICIENCY OF NICKEL-DOPED SILICON SOLAR CELLS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
6
, Article 7.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss6/7