•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

Si and Si structures with a deep p–n-junctions (30 microns) were obtained by diffusion doping. It is shown that the parameters of silicon solar cells with a deep-lying p-n junction are improved by Nickel doping. Influence of additional temperature annealing at different temperatures of samples with clusters of Nickel atoms in the silicon lattice was investigated and optimal conditions for cluster formation were determined

References

1. Lunin L.S., Lunina M.L., Pashenko A.S., Alfimova D.L., Arustamyan D.A., Kazakova A.E. Kaskadnye solnechnye elementy na osnove nanogeterostruktur GaP/Si/Ge [Cascade solar cells based on GaP/Si/Ge nanoheterostructures], Pisma v Zhurnal tekhnicheskoi fiziki [Technical Physics Letters], 2019, vol. 45, no. 6, pp. 7-9. (in Russ.). 2. Bahadyrhanov M.K., Isamov S.B., Iliev H.M., Tachilin S.A., Kamalov K.U. Fotoelementy s rasshirennoi spektralnoi chuvstvitelnostyu na osnove kremniya s nanovarizonnymi strukturami [Photo cells with the expanded spectral response on the basis of silicon with nanovariband structures nanosize various band], Geliotekhnika [Applied Solar Energy], 2014, no. 2, pp. 3-5. (in Russ.). 3. Bakhadyrhanov M.K., Sodikov U.X., Melibayev D., Wumaier Tuerdi, Koveshnikov S.V., Khodjanepesov K.A., Zhan J.X. Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic, Journal of Materials Science and Chemical Engineering, 2018, vol. 6, pp. 180-190, DOI: 10.4236/msce.2018.64017. 4. Lindroos J., Fenning D.P., Backlund D.J., Verlage E., Gorgulla A., Estreicher S.K. Savin H., Buonassisi T. Nickel: A very fast diffuser in silicon, Journal of applied physics, 2013, V. 113, p. 7. 0021-8979, DOI: 10.1063/1.4807799. 5. Bakhadyrkhanova M.K., Isamov S.B., Kenzhaev Z.T., Koveshnikov S.V. Studying the Effect of Doping with Nickel on Silicon-Based Solar Cells with a Deep p–n-Junction, Technical Physics Letters, 2019, vol. 45, no. 10, pp. 959–962. DOI: 10.1134/S1063785019100031. 6. Abdurakhmanov B.A., Bakhadirkhanov M.K., Ayupov K.S., Iliyev H.M., Saitov E.B., Mavlyanov A., Kamalov H.U. Formation of Clusters of Impurity Atoms of Nickel in Silicon and Controlling Their Parameters, Nanoscience and Nanotechnology, 2014, vol. 4, no. 2, pp. 23-26, DOI: 10.5923/j.nn.20140402.01. 7. Bakhadyrkhanov M.K., Ismailov K.A., Ismaylov B.K., Saparniyazova Z.M. Clusters of nickel atoms and controlling their state in silicon lattice, V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 2018, vol. 21, no. 4, pp. 300-304, doi: https://doi.org/10.15407/spqeo 21.04.XXX. 8. Neustroev E.P., Smagulova S.A., Antonova I.V., Safronov L.N. Formirovanie elektricheski aktivnykh tsentrov v kremnii, obluchennom elektronami, v intervale temperatur 400-700 °С [Electrical active center formation in the electron irradiated silicon anneale] Semiconductors], Fizika i tekhnika poluprovodnikov [Semiconductors], 2004, vol. 38, no. 7, pp. 791-795. (in Russ.). 9. Afanasev V.P., Terukov E.I., Sherchenkov A.A. Tonkoplenochnye solnechnye elementy na osnove kremniya [Silicon-based thin-film solar cells], 2nd edit., Sankt-Peterburg, SPbGETU «LETI» Publ., 2011, 168 p. (in Russ.). 10. Fuks B.I. Povyshenie effektivnosti kremnievykh solnechnykh elementov [Improvement of the efficiency of silicon solar cells], Fizika i tehnika poluprovodnikov [Semiconductors], 2014, vol. 48, no. 12, pp. 1704-1712. (in Russ.).

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.