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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The paper presents the results of studies on the development of solid state power amplifiers based on MOS transistors in the large-signal mode. An express method has been developed for constructing the load characteristics of a power amplifier according to the static current-voltage characteristics of MOS transistors, or a set of. A method for combining the load characteristics of power amplifiers is proposed, which provides a relationship between the parameters of the MOS transistor and the parameters of the amplifier

References

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