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Home > EJSSE > Vol. 1 (2019) > Iss. 6

 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The research results of photosensitivity of Au-vGaAs: O-nCdS-nInP-Au structure heterojunction under various electrical circuit configuration are presented. It is shown experimentally that irrespective of the excited surface, they differ in photosensitivity in the spectral range of 0,85-0,9 μm and 1,31-1,55 μm, which is associated with photo-generation processes in high-resistance gallium arsenide and photoemission processes from metal to semiconductor

References

1. Sysoev I.A., Lunina M.L., Alfimova D.L., Blagin A.V., Gusev D.A., Seredin B.M. Formirovanie massivov kvantovykh tochek GaxIn1-xAsyP1-y v processe ionno-luchevogo osazhdenija [Formation of GaxIn1-xAsyP1-y quantum dot arrays during ion beam deposition] Zhurnal Neorganicheskie materialy.[Journal of Inorganic Materials]. 2014. Vol. 50, No. 3, p. 1-7. (In Russ.) 2. Alfimova D.L., L.S. Lunin, M.L. Lunina i dr. Tonkosloinye geterostruktury GaInSbAsPBi/ GaSb, poluchennye iz zhidkoi fazy v pole temperaturnogo gradient [Thin-layer GaInSbAsPBi/GaSb heterostructures obtained from the liquid phase in a temperature gradient field] Kristallografiya [Crystallography]. 2017, v. 62, No. 1, p. 137-142. (In Russ.) 3. Michael, J.A. Film growth mechanisms in pulsed laser deposition. Appled Physics. 2008, №93. P. 579 –587. 4. Alfimova D.L., Lunin L.S., Lunina M.L. Vliyanie uslovii vyrashhivaniya na kachestvo poverkhnosti i strukturnoe sovershenstvo mnogokomponentnykh geterostruktur soedinenii A3V5 [The influence of growing conditions on surface quality and structural perfection of multicomponent heterostructures of A3B5 compounds] Poverkhnost. Rentgenovskie, sinkhrotronnye i neitronnye issledovaniya. [Surface. X-ray, synchrotron and neutron studies]. 2014. No. 6. p. 103–112. (In Russ.) 5. Kosyachenko L.A., Mathew X., Motushhuk V.V., Sklyarchuk V.M. Generacionno-rekombinatscionnyi mekhanizm perenosa zaryada v tonkoplenochnom geteroperekhode CdS/CdTe.[ Generation-recombination charge transfer mechanism in a thin-film CdS/CdTe heterojunction] Fizika i tekhnika poluprovodnikov. [Semiconductors] 2005.V. 39. Issue. 5. pp. 569-572. (In Russ.) 6. Ishanin G.G., Pankov Je.D., Andreev A.L., Pol'shhikov G.V. Istochniki i priemniki izluchenija.[ Sources and receivers of radiation.]. Saint Petersburg, Polytekhnika Publ., 1991, pp. 125–133. (In Russ.) 7. Fotopriemniki s vnutrennim usileniem [Photodetectors with internal amplification]. (In Russ.) http://rudocs.exdat.com/docs/index-529755.html?page=5 8. D.D. Gulamova, A.V. Karimov, D.G. Chigvinadze, S.M. Ashimov,O.V. Magradze,S.H. Bobokulov, Zh.Sh. Turdiev,H.N. Bahronov. Issledovanie kriticheskoi temperatury Tc gomofaznykh sverkhprovodnikov (Bi1.7Pb0.3Sr2Ca(n−1)CunOy (n = 3, 4, 5) i vol't-ampernykh kharakteristik siendvich-par poluprovodnik InP−sverkhprovodnik Bi/Pb (2223, 2234, 2245). [Investigation of the critical temperature Tc of homophase superconductors (Bi1.7Pb0.3Sr2Ca (n − 1) CunOy (n = 3, 4, 5) and the current – voltage characteristics of the sandwich pair InP – Bi / Pb semiconductor (2223, 2234, 2245)] Zhurnal tekhnicheskoi fiziki [Journal of Technical Physics]. 2019, vol. 89, no. 4. pp. 583-589. (In Russ.) 9. Timoshenko O.T. Novaya mnogokomponentnaya poluprovodnikovaya sistema InP-CdS. Ee poverkhnostnye fiziko-khimicheskie svoistva: dis. kand. khim. nauk: 02.00.04 [New multi-component semiconductor system InP-CdS. Its surface physical and chemical properties: dis. Cand. Chem. Sciences: 02.00.04] Omsk, 2006.181 p. RSL OD, 61: 07-2 / 130. (In Russ.) 10. Karimov A.V., Yodgorova D.M., Abdulkhaev O.A. Physical principles of photo-current generation in Multi-Barrier Punch-Throungh-Structures Second chapter of book “Photodiodes - World Ac-tivities in 2011” edited by Jeong-Woo Park. InTech, 2011. pp. 23-36. [ISBN: 9789533075]. 11. Hludkov S.S., Tolbanov O.P., Vilisova M.D., Prudaev I.A. Poluprovodnikovye pribory na osnove arsenida galliya s glubokimi primesnymi tsentrami. Pod red. O.P. Tolbanova. [Semiconductor devices based on gallium arsenide with deep impurity centers]. Tomsk. Publishing House of Tomsk State University, 2016, p. 258. (In Russ.)

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