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Euroasian Journal of Semiconductors Science and Engineering

Article Title
SOME FEATURES OF HETEROJUNCTION OF Au-GaAs: O-nCdS-nInP-Au STRUCTURES PHOTOSENSITIVITY
Abstract
The research results of photosensitivity of Au-vGaAs: O-nCdS-nInP-Au structure heterojunction under various electrical circuit configuration are presented. It is shown experimentally that irrespective of the excited surface, they differ in photosensitivity in the spectral range of 0,85-0,9 μm and 1,31-1,55 μm, which is associated with photo-generation processes in high-resistance gallium arsenide and photoemission processes from metal to semiconductor
References
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Recommended Citation
Giyasova, Feruza Abdiazizovna; Karimov, Abdulaziz Vakhitovich; Yodgorova, Dilbara Mustafayevna; and Abdulkhaev, Oybek Abdullazizovich
(2019)
"SOME FEATURES OF HETEROJUNCTION OF Au-GaAs: O-nCdS-nInP-Au STRUCTURES PHOTOSENSITIVITY,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
6
, Article 4.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss6/4