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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this paper, we investigated the semiconductor-dielectric-semiconductor structures of the pCdTe-TeO2-n SnO2 type based on pCdTe thin films having a columnar structure with grain sizes of 100 ÷ 150 µm. The resistance of the pCdTe films is ρ ≈ 102÷103Оm • sm, the thickness is d ≈ 70÷100 μm. An n-type SnO2 layer was deposited by magnetron-ion sputtering. The photosensitive structure pCdTe-TeO2-n SnO2 can be widely used as sensors for detecting X-ray and gamma radiation.

References

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