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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

In this paper, the effect of high-temperature treatments on the development of a defect structure of silicon with transition elements is studied by using capacitive and infrared spectroscopy. It was found that the presence of bound states of technological impurities - particles of SiO2 and SiO4, in Si doped with transition elements leads to a change in the efficiency of the formation of deep levels associated with the atoms of manganese, cobalt and chromium. It was found that the presence of bound states of technological impurities in silicon, for example, SiO2 particles in the Si lattice, increases the efficiency of the deep centers formation created in the semiconductor band gap, while the presence of a SiO2 film, on the contrary, prevents the introduction of T-ion impurities into the bulk of silicon.

References

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