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Euroasian Journal of Semiconductors Science and Engineering

Article Title
Abstract
. The effect of isochronous annealing on the parameters of MIS- structures with impurities of tungsten and molybdenum irradiated with 60Co -quanta was studied. It is shown that the presence of impurities of refractory elements - tungsten or molybdenum - in the silicon substrate of MIS - structures leads to stabilization of all parameters of the studied structures Al-SiO2-Si and Al-SiO2-Si under various heat treatments at temperatures Totj = 70÷400oC and irradiation. It was found that pre-annealing of MIS - structures with W and Mo impurities at 350oC for 30 minutes in a nitrogen atmosphere, carried out in order to reduce the density of surface States, reduces the concentration radiation defects introduced by irradiation.
References
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Recommended Citation
Daliev, Khojakbar Sultanovich; Daliev, Shahrukh Khozhakbarovich; Paluanova, Anifa Daryabayevna; and Husanov, Zafarjon Murodovich
(2019)
"RADIATION AND THERMAL DEFECT FORMATION IN SILICON MIS - STRUCTURES WITH IMPURITIES OF REFRACTORY ELEMENTS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
5
, Article 9.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss5/9