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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

. The effect of isochronous annealing on the parameters of MIS- structures with impurities of tungsten and molybdenum irradiated with 60Co -quanta was studied. It is shown that the presence of impurities of refractory elements - tungsten or molybdenum - in the silicon substrate of MIS - structures leads to stabilization of all parameters of the studied structures Al-SiO2-Si and Al-SiO2-Si under various heat treatments at temperatures Totj = 70÷400oC and irradiation. It was found that pre-annealing of MIS - structures with W and Mo impurities at 350oC for 30 minutes in a nitrogen atmosphere, carried out in order to reduce the density of surface States, reduces the concentration radiation defects introduced by irradiation.

References

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