Euroasian Journal of Semiconductors Science and Engineering
Article Title
INCREASING THE THERMAL STABILITY OF SILICON IN THE FORMATION OF CLUSTERS OF IMPURITY NICKEL ATOMS
Abstract
It is established that additional alloying of silicon with nickel at a temperature of T=1100÷1200°C, allows to provide rather high thermal stability of its electric parameters in the range of temperatures of T=450÷1200°C. Clusters of impurity nickel atoms in the silicon lattice act as active centers that suppress the generation of thermal donors and other recombination centers. Using the EDS energy dispersion X-ray spectroscopy method, the composition of clusters of impurity nickel atoms consisting of silicon atoms 51,61% and nickel 48,39% was determined
References
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Recommended Citation
Zikrillayev, Nurullo Fatkhullayevich; Ismaylov, Bayram Kanatbaevich; Tachilin, Stanislav Anatolevich; and Isamov, Sobirjon Boltayevich
(2019)
"INCREASING THE THERMAL STABILITY OF SILICON IN THE FORMATION OF CLUSTERS OF IMPURITY NICKEL ATOMS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
5
, Article 8.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss5/8