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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The photosensitivity of a three-barrier photodiode m-n-p-m-structure, where the m-n- and p-m-junctions are formed as rectifying, are studied. It is shown the significant increasing of quantum efficiency during exciting of structure from the substrate side when n-p-heterojunction is direct biased. It is found the condition which leads to a state with a constant sensitivity in a wide range from 0,95 to 1,3 eV that can be interested for telecommunication and fiber-optic systems. It is shown the availability in structure of internal photoelectric gain

References

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