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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The kinetics of deep-level annealing in silicon with an admixture of platinum at low temperatures was studied using capacitive spectroscopy. It is shown that isothermal annealing of deep levels in Si begins at 350oC and leads to a sharp decrease in the concentration of Pt levels, while as annealing progresses, the concentration of the EC-0.21 eV level due to heat treatment defects increases. It was found that the kinetics of annealing levels also depends on the oxygen content in silicon.

References

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