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Home > EJSSE > Vol. 1 (2019) > Iss. 5

 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The current-voltage characteristic of n-GaP-p-(InSb)1-x(Sn2)x (0 - х- 0.05) heterostructures has been studied. It has been shown that at low voltages V < 0.5 V, the current-voltage characteristic is described by the exponential law: I = I0-exp (qV /ckT), and at large ones from 0.5 to 1.8 V power laws: I = A-V m with different values of the coefficient A and exponent m at various voltages. At higher voltages - from 2.10 to 2.48 V, a sublinear part is observed, which is described by the law: V= V0-exp(Iad / S). The results are explained by the diffusion-drift mechanism of current transfer in the regime of dielectric relaxation, as well as the effect of injection depletion.

References

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