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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Issue 5

Articles

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FEATURES OF THE CURRENT-VOLTAGE CHARACTERISTIC OF n-GaP-p-(InSb)1-x(Sn2)x HETEROSTRUCTURE
Amin Safarbayevich Saidov, Ada Yulyevna Leyderman, Shukrullo Negmatovich Usmonov, and Umida Palvanovna Asatova

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INFLUENCE OF LOW-TEMPERATURE TREATMENTS ON THE BEHAVIOR OF DEEP LEVELS IN SILICON DOPED WITH PLATINUM
Sharifa Bekmuradovna Utamuradova, Zafarbek Olimbek ugli Olimbekov, Jonibek Jumayevich Khamdamov, and Kakhramon Makhmudjanovich Fayzullaev

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DIGITAL HOLOGRAPHIC INTERFEROMETRY IN PHYSICAL MEASUREMENTS
Zakirjan Toxirovich Аzamatov, Nurlan Niyatullayevich Bazarbayev, Mira Ruzimovna Bekchanova, and Murod Akbarali ugli Yuldoshev

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THREE-BARRIER Au/AlGaAs(n)/GaAs(p)/Ag PHOTODIODE STRUCTURES
Anvar Azamovich Yakubov, Oybek Abdullazizovich Abdulkhaev, Alim Adilovich Khakimov, and Abdulaziz Vakhitovich Karimov

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THE FLOW SENSORS OF A CONTINUOUS MEDIUM
Sayfillo Saidovich Nasriddinov and Muzaffar Ibragimovich Mannonov

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INCREASING THE THERMAL STABILITY OF SILICON IN THE FORMATION OF CLUSTERS OF IMPURITY NICKEL ATOMS
Nurullo Fatkhullayevich Zikrillayev, Bayram Kanatbaevich Ismaylov, Stanislav Anatolevich Tachilin, and Sobirjon Boltayevich Isamov

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RADIATION AND THERMAL DEFECT FORMATION IN SILICON MIS - STRUCTURES WITH IMPURITIES OF REFRACTORY ELEMENTS
Khojakbar Sultanovich Daliev, Shahrukh Khozhakbarovich Daliev, Anifa Daryabayevna Paluanova, and Zafarjon Murodovich Husanov