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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The paper presents studies of the tensoelectric properties of silicon in the volume of which nanoclusters of impurity manganese atoms were formed. To increase the strain, a special geometric shape of the crystal was developed. To study the tensoelectric properties of the samples, a special installation was designed and assembled, which allows measurements to be made both in the dark and under lighting

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