Euroasian Journal of Semiconductors Science and Engineering
Article Title
Abstract
The paper presents studies of the tensoelectric properties of silicon in the volume of which nanoclusters of impurity manganese atoms were formed. To increase the strain, a special geometric shape of the crystal was developed. To study the tensoelectric properties of the samples, a special installation was designed and assembled, which allows measurements to be made both in the dark and under lighting
Recommended Citation
Tursinbaev, Sabirbay Awesbay ugli; Kamalov, Amangeldi Bazarbaevich; Iliev, Halmurat Mijitovich; and Tachilin, Stanislav Anatolevich
(2019)
"TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
4
, Article 9.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss4/9