The paper presents studies of the tensoelectric properties of silicon in the volume of which nanoclusters of impurity manganese atoms were formed. To increase the strain, a special geometric shape of the crystal was developed. To study the tensoelectric properties of the samples, a special installation was designed and assembled, which allows measurements to be made both in the dark and under lighting
Tursinbaev, Sabirbay Awesbay ugli; Kamalov, Amangeldi Bazarbaevich; Iliev, Halmurat Mijitovich; and Tachilin, Stanislav Anatolevich
"TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 9.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss4/9