"TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS" by Sabirbay Awesbay ugli Tursinbaev, Amangeldi Bazarbaevich Kamalov et al.

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Euroasian Journal of Semiconductors Science and Engineering

Article Title

TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS

Authors

Sabirbay Awesbay ugli Tursinbaev, Doctoral Student of Nukus State Pedagogical Institute, NukusFollow
Amangeldi Bazarbaevich Kamalov, Dr. of Phys. and Math.Sc., Ass. Prof., Dean of the Faculty of Physics and Mathematics, Nukus State Pedagogical Institute, NukusFollow
Halmurat Mijitovich Iliev, Dr. of Phys. and Math.Sc., Professor, Head of the Department of Tashkent State Technical University, Tashkent, UzbekistanFollow
Stanislav Anatolevich Tachilin, Ph.D Ass. Prof. ofTashkent State Technical University, Tashkent, UzbekistanFollow

Abstract

The paper presents studies of the tensoelectric properties of silicon in the volume of which nanoclusters of impurity manganese atoms were formed. To increase the strain, a special geometric shape of the crystal was developed. To study the tensoelectric properties of the samples, a special installation was designed and assembled, which allows measurements to be made both in the dark and under lighting

Recommended Citation

Tursinbaev, Sabirbay Awesbay ugli; Kamalov, Amangeldi Bazarbaevich; Iliev, Halmurat Mijitovich; and Tachilin, Stanislav Anatolevich (2019) "TENSE PROPERTIES OF SILICON WITH NANOCLUSTERS," Euroasian Journal of Semiconductors Science and Engineering: Vol. 1 : Iss. 4 , Article 9.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss4/9

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Euroasian Journal of Semiconductors Science and Engineering

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