Euroasian Journal of Semiconductors Science and Engineering
Abstract
Theoretically, the features of the plasma contacts of a semiconductor in an ultrathin gas discharge cell are considered, in particular, the kinetics of the increase in the carrier flux when a rectangular voltage stage is turned on is considered. A more complicated case is considered when there is a layer of distributed resistance in series with the photosensitive semiconductor layer, as well as the case when the voltage supplied to the gas discharge cell has a more complex shape than a rectangular step
Recommended Citation
Daliev, Khojakbar Sultanovich; Khaydarov, Zokirjon; Yuldashev, Nosirjon Khaydarovich; and Yuldashev, Kurshidjon Tolibovich
(2019)
"NONEQUILIBRIUM PROCESSES ON THE CONTACT SEMICONDUCTOR - GAS DISCHARGE PLASMA,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
4
, Article 3.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss4/3