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Euroasian Journal of Semiconductors Science and Engineering

Abstract

Theoretically, the features of the plasma contacts of a semiconductor in an ultrathin gas discharge cell are considered, in particular, the kinetics of the increase in the carrier flux when a rectangular voltage stage is turned on is considered. A more complicated case is considered when there is a layer of distributed resistance in series with the photosensitive semiconductor layer, as well as the case when the voltage supplied to the gas discharge cell has a more complex shape than a rectangular step

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