"NONEQUILIBRIUM PROCESSES ON THE CONTACT SEMICONDUCTOR - GAS DISCHARGE " by Khojakbar Sultanovich Daliev, Zokirjon Khaydarov et al.

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Euroasian Journal of Semiconductors Science and Engineering

Article Title

NONEQUILIBRIUM PROCESSES ON THE CONTACT SEMICONDUCTOR - GAS DISCHARGE PLASMA

Authors

Khojakbar Sultanovich Daliev, Doctor of Physical and Mathematical Sciences, Professor, Director of the Branch of National Research University «Moscow Energy Institute» in Tashkent,UzbekistanFollow
Zokirjon Khaydarov, Cand. of Phys.-Math. Sc., Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, UzbekistanFollow
Nosirjon Khaydarovich Yuldashev, Doctor of Phys.-Math. Sc., Professor of Ferghana Polytecnic Instutute, Ferghana, UzbekistanFollow
Kurshidjon Tolibovich Yuldashev, Doctor of philosophy (PhD) on Phys.-Math. Sc., Ferghana, UzbekistanFollow

Abstract

Theoretically, the features of the plasma contacts of a semiconductor in an ultrathin gas discharge cell are considered, in particular, the kinetics of the increase in the carrier flux when a rectangular voltage stage is turned on is considered. A more complicated case is considered when there is a layer of distributed resistance in series with the photosensitive semiconductor layer, as well as the case when the voltage supplied to the gas discharge cell has a more complex shape than a rectangular step

Recommended Citation

Daliev, Khojakbar Sultanovich; Khaydarov, Zokirjon; Yuldashev, Nosirjon Khaydarovich; and Yuldashev, Kurshidjon Tolibovich (2019) "NONEQUILIBRIUM PROCESSES ON THE CONTACT SEMICONDUCTOR - GAS DISCHARGE PLASMA," Euroasian Journal of Semiconductors Science and Engineering: Vol. 1 : Iss. 4 , Article 3.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss4/3

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Euroasian Journal of Semiconductors Science and Engineering

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