"SILICON SOLAR ELEMENT WITH SMALL P-N JUNCTIONS" by Erkin Zunnunovich Imamov, Ramizulla Abdullaevich Muminov et al.

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Euroasian Journal of Semiconductors Science and Engineering

Article Title

SILICON SOLAR ELEMENT WITH SMALL P-N JUNCTIONS

Authors

Erkin Zunnunovich Imamov, Dr. of Phys. and Math. Sc., Professor of Tashkent University of Information Technologies named after Muhammad Al-KhwarizmiFollow
Ramizulla Abdullaevich Muminov, Dr. of Phys. and Math. Sc., Academician, Head of the Laboratoryof the Physical-Technical Institute SPA “Physics-Sun” of ASUz, Tashkent, Uzbekistan
Temur Asfandiyarovich Djalalov, PhD of Phys. and Math. Sc., Professor, Tashkent University of Information Technologies named after Muhammad Al-KhwarizmiFollow
Xasan Narzullaevich Karimov, Assistant of theTashkent University of Information Technologies named after Muhammad Al-KhwarizmiFollow

Abstract

A model of p-n transition of micron size grown on a solar cell (SС) substrate from low-cost stable technical (or metallurgical) silicon is proposed. These SС with p-n transitions of micron size are particularly effective in the process of mass production of solar electricity, when the SE is constantly in aggressive climatic conditions

Recommended Citation

Imamov, Erkin Zunnunovich; Muminov, Ramizulla Abdullaevich; Djalalov, Temur Asfandiyarovich; and Karimov, Xasan Narzullaevich (2019) "SILICON SOLAR ELEMENT WITH SMALL P-N JUNCTIONS," Euroasian Journal of Semiconductors Science and Engineering: Vol. 1 : Iss. 4 , Article 2.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss4/2

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