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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

A model of p-n transition of micron size grown on a solar cell (SС) substrate from low-cost stable technical (or metallurgical) silicon is proposed. These SС with p-n transitions of micron size are particularly effective in the process of mass production of solar electricity, when the SE is constantly in aggressive climatic conditions

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