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Euroasian Journal of Semiconductors Science and Engineering

Abstract

The transparency coefficients of an asymmetric potential barriers of a semiconductor structure consisting of alternating potential barriers and potential wells are calculated. In this case, the difference between the effective electron masses and the height of the potenial barriers has taken into account.It is shown that in asymmetric semiconductor structure should exhibit oscillation of the electron energy in the dependence of the transmission coefficient through the potential barrier. This oscillation is due to the interference of waves moving to the barrier and reflected from the potential barrier.It is pointed out that such an interference phenomenon in the structure does not disappear even in a symmetric structure because of the difference in the effective masses of electrons in different regions of the structure.

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