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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

It was found that the substrates used have the perfect crystal lattice and their structural parameters correspond to the parameters of high-quality films (GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y. It was determined that films (GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y are single-crystal with the orientation (111) and the size of block is 620 Å and the film crystal lattice parameter is af = 5.656 Å. Preliminary electrophysical parameters were found at 300 K, which the conductivity is p-type, the concentration and mobility of the main charge carriers are 1,5 •1016 cm-3 and 435 сm2/V∙s.

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