The effect of the buffer frontal layer on the spectral dependence of the photosensitivity of heterostructured photo detectors based on a polycrystalline semiconductor binary compound CdTe was studied. It is established that as a result of replacing the CdS buffer layer with a wide-gap semiconductor CdO layer, the spectral photosensitivity of the CdTe-based heterojunction photodetector increases in the short-wavelength spectrum of electromagnetic radiation
"INFLUENCE OF BUFFER LAYER MATERIAL ON THE PHOTO-SENSITIVITY SPECTRUM OF HETEROSTRUCTURES BASED ON THE POLYCRYSTALLINE LAYER OF CADMIUM TELLURIDE,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 8.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss3/8