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Euroasian Journal of Semiconductors Science and Engineering

Article Title

INFLUENCE OF BUFFER LAYER MATERIAL ON THE PHOTO-SENSITIVITY SPECTRUM OF HETEROSTRUCTURES BASED ON THE POLYCRYSTALLINE LAYER OF CADMIUM TELLURIDE

Abstract

The effect of the buffer frontal layer on the spectral dependence of the photosensitivity of heterostructured photo detectors based on a polycrystalline semiconductor binary compound CdTe was studied. It is established that as a result of replacing the CdS buffer layer with a wide-gap semiconductor CdO layer, the spectral photosensitivity of the CdTe-based heterojunction photodetector increases in the short-wavelength spectrum of electromagnetic radiation

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