Euroasian Journal of Semiconductors Science and Engineering


The DLTS and PC methods were used to study the energy spectrum of defects in silicon doped with molybdenum atoms. It was found that the diffusion introduction of Mo into Si leads to the formation of three deep levels with ionization energies Ec-0,20 eV and Ec – 0,29 eV and Ev + 0,36 eV. It is shown that the thermal and optical activation energies of the levels in n-Si practically coincide



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