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Euroasian Journal of Semiconductors Science and Engineering

Article Title

CREATION OF PHOTODETECTORS BASED ON FILM HETEROSTRUCTURE p – MEMBRANOUS CdTe – ZnSe C DEEP IMPURITY LEVELS

Abstract

This article will analyze the spectrum of the photocurrent in a layered film heterostructure CdTe - ZnSe with deep impurity levels. As demonstrated by the experimental results that the heterostructure CdTe - ZnSe observed a new effect in the measurement of the photoconductivity spectra, depending on the direction of the applied electric field, and the applied field stimulates the emergence of photo-emf

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