The results of a study of the temperature sensitivity of silicon structures with a depleted base region, in which the voltage of full depletion of the base region is used as a measurement parameter, are presented. It is shown that at a certain reverse operating voltage (Uo), the base region of the silicon structure under study is fully depleted, and the measuring potential by the growing operating voltage acquires a constant value, which changes only by changing of the temperature and proportionally to it. The temperature sensitivity of the structure was determined over a wide temperature range from -180°C to 180°C, which is highly linear with a sensitivity of +2.18 mV/оС
Abdulkhaev, Oybek; Bebitov, Rahimjon; Khakimov, Alim; and Rakhmatov, Axmad
"FEATURES OF TEMPERATURE SENSITIVITY OF SILICON STRUCTURE
WITH DEPLETED BASE REGION,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 5.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss3/5