•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The results of a study of the temperature sensitivity of silicon structures with a depleted base region, in which the voltage of full depletion of the base region is used as a measurement parameter, are presented. It is shown that at a certain reverse operating voltage (Uo), the base region of the silicon structure under study is fully depleted, and the measuring potential by the growing operating voltage acquires a constant value, which changes only by changing of the temperature and proportionally to it. The temperature sensitivity of the structure was determined over a wide temperature range from -180°C to 180°C, which is highly linear with a sensitivity of +2.18 mV/оС

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.