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Euroasian Journal of Semiconductors Science and Engineering

Article Title

STUDY OF THE SCHOTTKY POWER DIODES DEGRADATION UNDER 60Co -IRRADIAION

Abstract

The study concerns resistance to gamma-radiation damage of the power Schottky diodes Cr-Si. These diodes demonstrate parameters stability in the wide range of irradiation doses. Also radiation-induced shift of the non-ideality factor n had been revealed

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