The influence of preliminary heat treatment on the behavior of impurities of 3d elements, specially introduced to modify the properties of Si, is investigated. The interaction of atoms of 3d elements with technological impurities-oxygen and carbon in Si, which are always present in the crystal lattice in high concentrations, was also found
Utamuradova, Sharifa and Fayzullaev, Kakhramon
"THE ROLE OF HEAT TREATMENT IN THE FORMATION OF DEFECTS IN SILICON WITH AN IMPURITY OF COBALT,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 1.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss3/1