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Euroasian Journal of Semiconductors Science and Engineering

Issue 3

Articles

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DIMENSIONAL QUANTIZATION IN A SEMICONDUCTOR QUANTUM PIT. DRESSELHOUSE MODEL
Vohob Rasulov, Rustam Rasulov, Ravshan Sultonov, and Ikboljon Eshboltaev

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FEATURES OF THE NEW STRUCTURE OF THE BEAM FOR THE LOAD CELL
Abdulaziz Karimov, Alim Khakimov, Damir Istamov, and Abduvakhob Karimov

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FEATURES OF TEMPERATURE SENSITIVITY OF SILICON STRUCTURE WITH DEPLETED BASE REGION
Oybek Abdulkhaev, Rahimjon Bebitov, Alim Khakimov, and Axmad Rakhmatov

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ENERGY SPECTRUM OF DEFECTS IN SILICON WITH MOLYBDENUM ADMIXTURE
Shakhrukh Daliev, Anifa Paluanova, Kakhramon Fayzullaev, and Srajatdin Kaypnazarov

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STRUCTURAL FEATURES OF (GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y SEMICONDUCTOR SOLID SOLUTION
Shakhriyor Yulchiev, Akramjon Boboev, and Johongir Usmonov

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STUDY OF THE SCHOTTKY POWER DIODES DEGRADATION UNDER 60Co -IRRADIAION
Marat Tagaev, Bakhtiyar Abdikamalov, Viktor Statov, and Saparbay Bekbergenov