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Euroasian Journal of Semiconductors Science and Engineering

Issue 3

Articles

 

DIMENSIONAL QUANTIZATION IN A SEMICONDUCTOR QUANTUM PIT. DRESSELHOUSE MODEL
Vohob Rasulov, Rustam Rasulov, Ravshan Sultonov, and Ikboljon Eshboltaev

 

FEATURES OF THE NEW STRUCTURE OF THE BEAM FOR THE LOAD CELL
Abdulaziz Karimov, Alim Khakimov, Damir Istamov, and Abduvakhob Karimov

 

FEATURES OF TEMPERATURE SENSITIVITY OF SILICON STRUCTURE WITH DEPLETED BASE REGION
Oybek Abdulkhaev, Rahimjon Bebitov, Alim Khakimov, and Axmad Rakhmatov

 

ENERGY SPECTRUM OF DEFECTS IN SILICON WITH MOLYBDENUM ADMIXTURE
Shakhrukh Daliev, Anifa Paluanova, Kakhramon Fayzullaev, and Srajatdin Kaypnazarov

 

(GaAs1-δBiδ)1-x-y(Ge2)x(ZnSe)y STRUCTURAL FEATURES OF SEMICONDUCTOR SOLID SOLUTION
Shakhriyor Yulchiev, Akramjon Boboev, and Johongir Usmonov

 

STUDY OF THE SCHOTTKY POWER DIODES DEGRADATION UNDER 60Co -IRRADIAION
Marat Tagaev, Bakhtiyar Abdikamalov, Viktor Statov, and Saparbay Bekbergenov