The paper considers the influence of ultrasonic fields on the photoelectric and spectral characteristics of diffusion Si-receivers of electromagnetic radiation. It was found that ultrasonic irradiation increases the lifetime, diffusion length of carriers and, as a consequence, increases the efficiency of collecting carriers on the electrical contacts of Si-receivers. As a result of these processes, an increase in the value of the short-circuit current is observed, which causes an increase in the open circuit voltage and the efficiency of such a diffusion Si-structure operating in the photo reformation mode.
Gaibov, Abdumalik G. and Vakhobov, Kutbiddin I.
"INFLUENCE OF ULTRASONIC WAVES ON THE PHOTOELECTRIC AND SPECTRAL CHARACTERISTICS OF SI-PHOTODETECTORS,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 6.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss2/6