This paper developed injection-voltaic transistor presents. The results research of the V-I characteristic of cascode injection-voltaic transistor. It is shown that the proposed transistor operates stably at values of the reverse voltage collector-base 2-3 times higher than single transistors.
Aripova, Ziyoda Kh. and Toshmatov, Shunkorjon T.
"CASCODE INJECTION-VOLTAIC TRANSISTOR
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 5.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss2/5