It was found that the doping of the semiconductor substrate with Rh and Ir atoms leads to the increase in the density of surface states at the Si – SiO2 interface. It is determined that the surface states, due to the presence of an impurity Rh and Ir are effective generation centers.
Daliev, Khojakbar S.; Yulchiev, Shakhriyor Kh.; and Mansurov, Xotamjon J.
"INFLUENCE OF RHODIUM AND IRIDIUM IMPURITY ATOMS ON THE CAPACITIVE CHARACTERISTICS OF Si-SiО2 STRUCTURES,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 1.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss2/1