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Euroasian Journal of Semiconductors Science and Engineering

Article Title

STRUCTURAL FEATURES OF THE SOLID SOLUTION (GaAs)1-x-y(Ge2)x(ZnSe)y WITH QUANTUM DOTS (0≤x≤0,17; 0≤y≤0,14)

Abstract

X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.

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