INFLUENCE OF HEAT TREATMENT ON THE BEHAVIOR OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN
By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.
Daliev, Shokhrukh Kh.; Mamadalimov, Abdugofur T.; Nasriddinov, Sayfullo S.; and Paluanova, Anifa D.
"INFLUENCE OF HEAT TREATMENT ON THE BEHAVIOR
OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 8.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/8