The processes of formation of defects in silicon, doped by gadolinium are investigated by the method of DLTS. It is shown that in diffusion the introduction of Gd in the Si leads to the formation of deep levels with ionization energies Ec–0.23 eV, Ec–0.35 eV, Ec–0.41 eV and Ec–0.54 eV and a capture cross section of electrons n: 410-17cm-2, 210-15 cm2, 1.110-16 cm2 and 1.510-15 cm2, respectively, and in samples p-Si found only one level with Ev+0.32 eV.
Norkulov, Shoakhriyor B.; Daliev, Khodjakbar S.; Dehkanov, Makhmud Sh.; and Erugliev, Uktam K.
"CAPACITIVE SPECTROSCOPY OF DEFECTS IN SEMICONDUCTORS, DOPED BY ATOMS OF GADOLINIUM,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 47.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/47