Home > EJSSE > Vol. 1 (2019) > Iss. 1
Euroasian Journal of Semiconductors Science and Engineering
Abstract
The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.
Recommended Citation
Aripov, Khayrulla K.; Abdullayev, Akhmed M.; and Toshmatov, Shunkurjon T.
(2019)
"FEATURES THE GENERALITIES OF I-V CURVE FORMATION
IN MOSFET WITH A COMMON DRAIN,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
:
Iss.
1
, Article 46.
Available at:
https://uzjournals.edu.uz/semiconductors/vol1/iss1/46