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Euroasian Journal of Semiconductors Science and Engineering

Abstract

The results of theoretical and experimental studies of the generalities of current-voltage characteristics curve formation of metal-oxide-semiconductor transistors of the common drain are presented. The principal difference between input and output characteristics of the common drain from the analogical characteristics in the common source is shown. The source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common drain are given. Combined families of source-gate and source characteristics of a metal-oxide-semiconductor transistor in the common source and drain are obtained.

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