X-ray diffraction studies showed that the resulting film has a sphalerite structure and is single-crystal with the (100) orientation. The lattice parameter of the film is af = 0.56697 nm. By atomic force microscope was shown the possibility of obtaining a semiconductor heterostructure with quantum dots by the method of liquid phase epitaxy.
Zainabidinov, Sirojiddin Z.; Mansurov, Khatamjon J.; Boboev, Akramjon Y.; and Makhmudov, Hkushruy A.
"STRUCTURAL FEATURES OF THE SOLID SOLUTION (GaAs)1-x-y(Ge2)x(ZnSe)y WITH QUANTUM DOTS (0≤x≤0,17; 0≤y≤0,14),"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 43.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/43