By means of Deep Level Transient Spectroscopy the kinetics of the annealing of the levels of tungsten in silicon during heat treatment in the temperature range 150÷4000С was studied. It was found a non-monotonic change in the concentration of deep levels Ec-0.30 eV and Ec-0.39 eV under isothermal annealing: the concentrations of both levels at short times increase, then the concentration level of Ec-0.30 eV sharply decreases, and the reduction of the concentration of deep level Ec-0.39 eV is much slower.
Daliev, Shokhrukh Kh.; Mamadalimov, Abdugofur T.; Nasriddinov, Sayfullo S.; and Paluanova, Anifa D.
"INFLUENCE OF HEAT TREATMENT ON THE BEHAVIOR
OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 42.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/42