"THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES " by Davron R. Djuraev, Abdulaziz V. Karimov et al.

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Euroasian Journal of Semiconductors Science and Engineering

Article Title

THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES

Authors

Davron R. Djuraev, Bukhara State University, Bukhara, Uzbekistan.
Abdulaziz V. Karimov, SPA “Physics-Sun” of the Uzbekistan Academy of Sciences, Tashkent, UzbekistanFollow
Dilbara M. Yodgorova, SPA “Physics-Sun” of the Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
Akmal A. Turaev, Bukhara State University, Bukhara, Uzbekistan.

Abstract

This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.

Recommended Citation

Djuraev, Davron R.; Karimov, Abdulaziz V.; Yodgorova, Dilbara M.; and Turaev, Akmal A. (2019) "THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES," Euroasian Journal of Semiconductors Science and Engineering: Vol. 1 : Iss. 1 , Article 36.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/36

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