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Euroasian Journal of Semiconductors Science and Engineering

Euroasian Journal of Semiconductors Science and Engineering

Abstract

The results of studies of the direct branch of the current – voltage characteristic of the Al-Al2O3-p-CdTe-Mo structure with base thicknesses d ~ 8÷10 μm are presented. It was shown that, along with point defects and impurities, complex complexes participate in the recombination processes in the base of the structure under study. It was established that at low current densities in point of recombination processes point defects take part, and at high current densities, when the recombination rate reaches full saturation of U≈NR/τi, the recombination processes in the samples under study are determined by complex complexes within which the electrons are delayed.

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