FEATURES OF DIFFUSION IN EPITAXIAL CoSI2 FILMS GROWN ON THE SURFACE OF FLUORETE OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN
The paper presents the results of the analysis of the epitaxial film CoSi2/Si/CaF2(100) grown by molecular beam epitaxy. It is proved that under certain conditions of heat treatment, so-called epitaxial silicides are formed on the crystal structure, which can play the role of conductive layers or metal coatings. The data obtained allow us to draw conclusions about the morphology of the film and the nature of diffusion in the CoSi2 layer.
Egamberdiev, Bakhrom E. and Sayfulloev, Shokhruh A.
"FEATURES OF DIFFUSION IN EPITAXIAL CoSI2 FILMS GROWN ON THE SURFACE OF FLUORETE
OF DEEP LEVELS IN SILICON DOPED BY TUNGSTEN,"
Euroasian Journal of Semiconductors Science and Engineering: Vol. 1
, Article 22.
Available at: https://uzjournals.edu.uz/semiconductors/vol1/iss1/22