•  
  •  
 

Euroasian Journal of Semiconductors Science and Engineering

Article Title

THE PRINCIPLES OF INCREASING THE SENSITIVITY OF TRANSISTOR STRUCTURES TO EXTERNAL INFLUENCES

Abstract

This article discusses a multifunctional sensor based on a field-effect transistor with a p-n-junction. The sensor allows to register temperature, light intensity, pressure with high level of sensitivity. At the same time, ensuring the sensitivity of the structure to external influences is practically solved due to constructive changes. Due to constructive solutions, the proposed sensor based on a field-effect transistor greatly exceeds the similar diode structures in sensitivity.

This document is currently not available here.

Share

COinS